Pengaruh Rapat Cacat DB Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n
Abstract
Validasi numerik terhadap sel surya homojunction berbasis a-Si:H hasil eksperimen secara fisis dianalisis menggunakan perangkat AFORS-HET (Automat FOR Simulation of HETerostructure) dengan meninjau pengaruh cacat dangling-bond (DB) pada lapisan (p)a-Si:H (Ntr) terhadap kinerja sel surya struktur TCO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/Ag. Variasi Ntr diberikan sesuai dengan hasil eksperimen antara 5.0 x 1017–5.0 x1019 cm-3/eV yang dioperasikan pada ketebalan lapisan-p berbeda disertai dengan analisis diagram pita energi, kurva karakteristik J-V, profil medan listrik, dan konsentrasi pembawa muatan. Hasil simulasi menunjukkan bahwa sel surya bekerja secara optimum jika nilai parameter Ntr mampu dikontrol untuk nilai < 5.0 x 1018 cm-3/eV, dimana pada kondisi ini efisiensi yang bisa dicapai sekitar 7.68% (VOC = 947.2 mV, JSC = 10.84 mA/cm2; FF = 74.82%) pada ketebalan lapisan-p sekitar 10 nm.
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DOI: https://doi.org/10.24198/jiif.v6i1.35948
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